Specific Process Knowledge/Lithography/Development/UV developer: Difference between revisions

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 =Process information=
+Processing on Developer TMAH UV-lithography consists of the following steps:
+*Post-exposure bake
+*Puddle development
+*Rinse
+'''Features of Developer TMAH UV-lithography:'''
+*Cassette-to-cassette wafer handling
+*In-line hotplates
+*In-line cool plate
+*Puddle developer module with rinse and dry
+==Post-exposure baking==
+Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, is carried out on one of the two hotplates. After baking, the wafer is cooled for 20 seconds on the 20°C cool plate.
+==Puddle Development==
+Development on Developer TMAH UV-lithography is divided into the following steps:
+*Pre-wet
+*Puddle dispense
+*Development
+*Spin-off
+Pre-wet may be done using developer or DI water, or it may be skipped. It consists of a short dispense at medium spin speed (2s @ 1200 rpm).
+Puddle dispense is done by dispensing developer (AZ 726 MIF) to the center of the wafer in order to build up a puddle of developer on the wafer. During the dispense, the wafer may be stopped or rotating slowly (30 rpm). The developer is dispenced at a rate of approximately 225 ml/min. A dispense time of 3s, and 7s is used for 4", and 6" wafers, respectively, corresponding to a volume of 11 ml, and 26 ml, respectively.
+Development is carried out by leaving the developer puddle on the wafer for the duration of the development time (puddle time). The rotation is stopped during the development, but the developer may be agitated by rotating the wafer a few turns at low speed, e.g. 2s @ 30 rpm halfway through the development time, in order to facilitate good uniformity.
+Spin-off is designed to stop the development by removing the developer from the wafer before the rinse. It is usually carried out as a short spin at high speed (3s @ 4000 rpm), but may be omitted.
+Processes are divided into single puddle (SP), double puddle (DP), and multiple puddle (MP).
+==Rinse==
+After development, the substrate is rinsed using DI water, and dried using nitrogen.
+The standard rinse and dry procedure is 30s at 4000 rpm with DIW being administered from the top at the center of the substrate, followed by a 10-15s dry at 3000 rpm using nitrogen from the top at the center of the substrate. The top side rinse is at a rate of approximately 500 ml/min, corresponding to 250 ml DIW during the rinse. The flow rate of the nitrogen is 50 l/min, and the drying time is set according to the size of the substrate.
+==Process recommendations==
+Recommended parameters for development of different resists.
+Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]]
+'''2 µm AZ nLOF 2020'''
+*PEB: 60s @ 110°C
+*Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°)
+'''1.5 µm AZ MiR 701'''
+*PEB: 60s @ 110°C
+*Development: SP 60s
+'''1.5 µm AZ 5214E'''
+*No PEB
+*Development: SP 60s
+'''2.2 µm AZ 5214E (image reversal)'''
+*Reversal bake: 60s-120s @ 110°C
+*Flood exposure: ~500 mJ/cm<sup>2</sup>
+*Development: SP 60s
+'''6.2 µm AZ 4562'''
+*No PEB
+*Development: MP 3x60s
+'''10 µm AZ 4562'''
+*No PEB
+*Development: MP 4x60s or MP 5x60s
+=Standard Processes=
+NB: The list of standard processes is not necessarily complete, as new processes are added over time.
+==Development (only)==
+Development sequences on Developer TMAH UV-lithography are grouped in the sequence number range 1000-1999 and are divided into the following steps: Pre-wet, puddle dispense, development, spin-off, and finally rinse and dry.
+Single puddle:
+*(1001) DCH 100mm SP 30s
+*(1002) DCH 100mm SP 60s
+*(1004) DCH 100mm SP 90s
+*(1003) DCH 100mm SP 120s
+*(1005) DCH 150mm SP 60s
+Multiple puddle:
+*(1019) DCH 100mm MP 3x60s
+*(1010) DCH 100mm MP 4x60s
+*(1012) DCH 100mm MP 5x60s
+*(1018) DCH 100mm MP 7x60s
+*(1017) DCH 100mm MP 10x60s
+*(1006) DCH 150mm MP 3x60s
+Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s, corresponding to a volume of 11 ml, and 26 ml, for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above. The multiple puddle sequences repeat the dispense, development, and spin off steps a number of times before the rinse.
+Special sequences:
+*DCH 100mm SP 60s no spinoff
+As DCH 100mm SP 60s except the spin-off step is omitted. The development is thus terminated by the rinse (30s @ 4000rpm). This may help in case of scumming problems.
+==Post-exposure baking (only)==
+Chemically amplified resists and cross-linking negative resists must be baked after exposure (Post-Exposure Bake, PEB) in order to finish the process initiated by the exposure light. The PEB sequences are grouped in the sequence number range 2000-2999:
+*(2001) DCH PEB 110C 60s
+*(2002) DCH PEB 110C 120s
+The baking is done at 110°C followed by a cooling step at 20°C for 20 seconds.
+==Combined PEB and development==
+For convenience, the PEB and development function of the machine may be combined in one sequence. The PEB + development sequences are grouped in the sequence number range 3000-3999:
+*(3001) DCH 100mm PEB60s@110C+SP60s
+*(3005) DCH 100mm PEB60s@110C+SP30s
+*(3010) DCH 150mm PEB60s@110C+SP60s
+The sequences are a combination of [substrate size] + [PEB at temperature and time] + [development for time].
+<!--
 *[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing|General process information]]
 *[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
 *[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
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