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{{cc-nanolab}}
{{cc-nanolab}}


=Developer TMAH UV-lithography=
=Developer: TMAH UV-lithography=
[[file:SUSS DEV.JPG|400px|right|thumb|Developer: TMAH UV-lithography is located in E-4.]]


[[Image:SUSS DEV.JPG|400px|right|thumb|Developer: TMAH UV-lithography is located in E-4.]]
'''Tool description'''<br>
The Developer TMAH UV-lithography is a fully automatic and programmable cassette-to-cassette system, which can be used for post-exposure baking and development of UV resists on 100 mm and 150 mm substrates. The development is done using AZ 726 MIF, which is a 2.38% TMAH solution with wetting agent.


Developer TMAH UV-lithography was released Q4 2014.
The developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.


{| class="wikitable"
! style="text-align:left" | Product:
| style="padding-left: 10px" | Süss MicroTec Gamma 2M developer
|-
! style="text-align:left" | Year of purchase:   
| style="padding-left: 10px" | 2014
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | Cleanroom E-4
|}
'''Chuck size and lift pins'''<br>
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|developer chuck size and hotplate pin positions]].
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|developer chuck size and hotplate pin positions]].


'''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]'''
'''User manual'''<br>
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager] - '''requires login'''


 
'''Tool training'''<br>
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager] - '''requires login'''
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br>
 
The tool training video is part of the online tool training, but can also be viewed [https://www.youtube.com/watch?v=fs9DRH0Eo3k here].
=Process Information=
<br clear="all" />
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]


=Equipment performance and process related parameters=
=Equipment performance and process related parameters=
 
{| class="wikitable"
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
! scope=row style="text-align: left;" | Tool purpose
!style="background:silver; color:black;" width="60"|Purpose
|
|style="background:LightGrey; color:black"|
Development of:
|style="background:WhiteSmoke; color:black"|
*AZ nLOF 2020
Development of
*AZ MIR 701
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 5214E
*AZ 4562
*AZ 4562
*DUV resists
Development of DUV resists:
*KrF M230Y
*KrF M35G
|-
|-
!style="background:silver; color:black;" width="60"|Developer  
! scope=row style="text-align: left;" | Developer
|style="background:LightGrey; color:black"|
| AZ 726 MIF (2.38% TMAH)
|style="background:WhiteSmoke; color:black" |
|-
AZ 726 MIF
! scope=row style="text-align: left;" | Development method
 
| Puddle
(2.38% TMAH in water)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
! scope=row style="text-align: left;" | Handling method
|style="background:LightGrey; color:black"|Development
|
|style="background:WhiteSmoke; color:black"|
*Vvacuum chuck for 100 mm & 150 mm wafers
Puddle
|-
|-
|style="background:LightGrey; color:black"|Handling
! scope=row style="text-align: left;" | Process temperature
|style="background:WhiteSmoke; color:black"|
| Room temperature
Vacuum chuck
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Process agitaion
|style="background:LightGrey; color:black"|Temperature
| 1 cycles per 30 seconds
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|-
|style="background:LightGrey; color:black"|Agitation
! scope=row style="text-align: left;" | Process rinse
|style="background:WhiteSmoke; color:black"|
| DI water
Rotation
|-
|-
|style="background:LightGrey; color:black"|Rinse
! scope=row style="text-align: left;" | Substrate sizes
|style="background:WhiteSmoke; color:black"|
|  
DI water
*100 mm wafers
*150 mm wafers
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate materials
|style="background:LightGrey; color:black"|Substrate size
|
|style="background:WhiteSmoke; color:black"|
*Silicon or glass substrates
* 100 mm wafers
*Film, or pattern, of all materials except Type IV
* 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate batch size
|style="background:WhiteSmoke; color:black"|
| 1-25
Silicon and glass substrates
 
Film or pattern of all except Type IV
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Media flow rates
|style="background:WhiteSmoke; color:black"|
|
1-25
|-  
!style="background:silver; color:black;" width="60"|Media flow rates
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*AZ 726 MIF (TMAH): 230 ml/min
*AZ 726 MIF (TMAH): 230 ml/min
*Topside rinse DI water: 400 ml/min (with BSR+CR active)
*Topside rinse DI water: 400 ml/min (with BSR+CR active)
*Backside rinse DI water: 55 ml/min (with TSR+CR active)
*Backside rinse DI water: 55 ml/min (with TSR+CR active)
*Process Nitrogen: 50 l/min
*Process Nitrogen: 50 l/min
|-
|}
|}
<br clear="all" />
<br clear="all" />
=Process information=
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
<br clear="all"/>

Revision as of 11:26, 12 March 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Developer: TMAH UV-lithography

Developer: TMAH UV-lithography is located in E-4.

Tool description
The Developer TMAH UV-lithography is a fully automatic and programmable cassette-to-cassette system, which can be used for post-exposure baking and development of UV resists on 100 mm and 150 mm substrates. The development is done using AZ 726 MIF, which is a 2.38% TMAH solution with wetting agent.

The developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.

Product: Süss MicroTec Gamma 2M developer
Year of purchase: 2014
Location: Cleanroom E-4

Chuck size and lift pins
Link to information about developer chuck size and hotplate pin positions.

User manual
The user manual and contact information can be found in LabManager - requires login

Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
The tool training video is part of the online tool training, but can also be viewed here.

Equipment performance and process related parameters

Tool purpose

Development of:

  • AZ nLOF 2020
  • AZ MIR 701
  • AZ 5214E
  • AZ 4562

Development of DUV resists:

  • KrF M230Y
  • KrF M35G
Developer AZ 726 MIF (2.38% TMAH)
Development method Puddle
Handling method
  • Vvacuum chuck for 100 mm & 150 mm wafers
Process temperature Room temperature
Process agitaion 1 cycles per 30 seconds
Process rinse DI water
Substrate sizes
  • 100 mm wafers
  • 150 mm wafers
Substrate materials
  • Silicon or glass substrates
  • Film, or pattern, of all materials except Type IV
Substrate batch size 1-25
Media flow rates
  • AZ 726 MIF (TMAH): 230 ml/min
  • Topside rinse DI water: 400 ml/min (with BSR+CR active)
  • Backside rinse DI water: 55 ml/min (with TSR+CR active)
  • Process Nitrogen: 50 l/min


Process information


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