Specific Process Knowledge/Lithography/Development/manualTMAH developer: Difference between revisions

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-'''Process recipes'''<br>
+==Process recipes==
 (Updated 2026-01-12, JEHEM)
 *-Rinse-
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 *2x060s
 *5x060s
+==Agitation==
+Testing showed that adding agitation to the puddle step gave better uniformity in the development rate over the entire area of the substrate as well as increased development rate. Tests were performed on under-exposed resist, specifically for showing the difference between the agitation and non-agitation puddle development.
+{| class="wikitable"
+|-
+!  !! Non-agitation !! Agitation
+|-
+! scope=row style="text-align: left;" | Test results
+|
+*Slower development
+*Higher non-uniformity
+|
+*Faster development
+*Better uniformity
+|-
+! scope=row style="text-align: left;" | Normalized development rate
+| 1 || 1.20
+|-
+! scope=row style="text-align: left;" | Non-uniformity
+| 21% || 11%
+|-
+! scope=row style="text-align: left;" | Substrate
+| colspan="2"|SSP silicon
+|-
+! scope=row style="text-align: left;" | Resist
+| colspan="2"|AZ 5214E
+|-
+! scope=row style="text-align: left;" | Exposure dose
+| colspan="2"|50 mJ/cm<sup>2</sup> (~50% of normal dose)
+|-
+! scope=row style="text-align: left;" | Development
+| colspan="2"|Single puddle for 60 seconds
+|-
+! scope=row style="text-align: left;" | Developer
+| colspan="2"|AZ 726 MIF (2.38% TMAH)
+|}
+<br clear="all" />
 =Equipment performance and process related parameters=