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=Developer: SU8 (Wet Bench)=
=Developer: SU8 (Wet Bench)=
[[Image:SU8dev.JPG|400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4.]]
[[file:SU8dev.JPG|400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4.]]


The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath.
'''Tool description'''<br>
The Developer: SU-8 (wet bench) is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as the product mr-Dev 600).


The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''
The SU-8 development is a three-stage process:
# Submerge into "FIRST" bath to dissolve the bulk of the resist
# Submerge into "FINAL" bath to finish the development
# Submerge into "RINSE" bath to stop the development process and rinse the substrates


=Process information=
The development time is controlled manually by the user. After development the substrates are dried in the empty bath, which is dedicated for drying.
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.


{| class="wikitable"
! style="text-align:left" | Product:
| style="padding-left: 10px" | Arias wet bench
|-
! style="text-align:left" | Year of purchase:   
| style="padding-left: 10px" | 2023
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | Cleanroom E-4
|}


Development time is strongly dependent on the SU-8 thickness.
'''User manual'''<br>
*Minimum development time: 1 min per 20 µm in FIRST
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager] - '''requires login'''


 
'''Tool training'''<br>
Suggestions:
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by online tool training and hands-on authorization training.<br>
*2-5µm: 2 min. in FIRST; 2 min. in FINAL
<br clear="all" />
*40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
*180-250µm: 15 min. in FIRST; 15 min. in FINAL


=Equipment performance and process related parameters=
=Equipment performance and process related parameters=
 
{| class="wikitable"
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
! scope=row style="text-align: left;" | Tool purpose
!style="background:silver; color:black;" align="center" width="60"|Purpose
|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
Development of:
*SU-8
*SU-8
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Developer  
! scope=row style="text-align: left;" | Developer
|style="background:LightGrey; color:black"|
| mr-Dev 600 (PGMEA)
|style="background:WhiteSmoke; color:black"|
mr-Dev 600
 
(PGMEA)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
! scope=row style="text-align: left;" | Development method
|style="background:LightGrey; color:black"|Development
| Submersion
|style="background:WhiteSmoke; color:black"|
Submersion
|-
|-
|style="background:LightGrey; color:black"|Handling
! scope=row style="text-align: left;" | Handling method
|style="background:WhiteSmoke; color:black"|
| Multi- or single wafer holder
Single wafer holder
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Process temperature
|style="background:LightGrey; color:black"|Temperature
| Room temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|-
|style="background:LightGrey; color:black"|Agitation
! scope=row style="text-align: left;" | Process agitaion
|style="background:WhiteSmoke; color:black"|
| Magnetic stirrer
Magnetic stirrer
|-
|-
|style="background:LightGrey; color:black"|Rinse
! scope=row style="text-align: left;" | Process rinse
|style="background:WhiteSmoke; color:black"|
| IPA
IPA
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate sizes
|style="background:LightGrey; color:black"|Substrate size
|  
|style="background:WhiteSmoke; color:black"|
*Chips
*50 mm wafers
*100 mm wafers
*100 mm wafers
*150 mm wafers, check the liquid level in the baths
*150 mm wafers, check the liquid level in the baths
*200 mm wafer, check the liquid level in the baths
*200 mm wafer, check the liquid level in the baths
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate materials
|style="background:WhiteSmoke; color:black"|
|
*Silicon and glass substrates
*Silicon and glass substrates
*Film, or pattern, of all materials except Type IV
*Film, or pattern, of all materials except Type IV
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Substrate batch size
|style="background:WhiteSmoke; color:black"|
| 1-6
1-6  
|-
|}
|}
<br clear="all" />
<br clear="all" />
=Process information=
Several aspects of the SU-8 processing outcome are affected by the development process:
* The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature
* Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worse in a fresh developer bath. This effect of the developer quickly saturates after developing 5-10 wafers
* The stability of fine structures (high aspect ratio structures) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying
'''Development time'''<br>
Development time is ''strongly'' dependent on the SU-8 thickness:
* Minimum development time: 1 min per 20 µm in FIRST bath
* Maximum development time: SU-8 is not very sensitive to over-development
Recommendations for development time:
* ≤5 µm: 2 minutes in FIRST bath, followed by 2 minutes in FINAL bath
* ~40 µm: 5 minutes in FIRST bath, followed by 5 minutes in FINAL bath
* ≥180 µm: 15 minutes in FIRST bath, followed by 15 minutes in FINAL bath
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Development/SU8_developer"