Specific Process Knowledge/Lithography/Strip/plasmaAsher05: Difference between revisions
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==Process Information== | ==Process Information== | ||
'''Typical stripping parameters'''<br> | |||
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate. | |||
*O<sub>2</sub>: 100 sccm | |||
*N<sub>2</sub>: 100 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 1000 W | |||
*Time (single wafer): 20-30 minutes | |||
*Time (full boat): 90 minutes | |||
===Process development notes=== | |||
[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Information about process development for plasma asher 04 and plasma asher 05 can be found here.]] | |||
'''Processes specifically only for plasma asher 5:'''<br> | '''Processes specifically only for plasma asher 5:'''<br> | ||
Revision as of 09:03, 25 June 2026
Plasma Asher 5
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 5 can be used for the following processes:
- Photoresist stripping
- Descumming
- Surface cleaning
- Removal of organic passivation layers and masks
Furthermore plasma processing using CF4 in plasma asher 5 can be used for:
- Etching of glass and ceramic
- Etching of SiO2, Si3N4, Si
- Removal of polyimide layers
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Process Information
Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
- O2: 100 sccm
- N2: 100 sccm
- Pressure (DSC): 1.3 mbar
- Power: 1000 W
- Time (single wafer): 20-30 minutes
- Time (full boat): 90 minutes
Process development notes
Information about process development for plasma asher 04 and plasma asher 05 can be found here.
Processes specifically only for plasma asher 5: