Specific Process Knowledge/Lithography/Strip/plasmaAsher05: Difference between revisions
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==Process Information== | ==Process Information== | ||
'''Typical stripping parameters'''<br> | |||
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate. | |||
*O<sub>2</sub>: 100 sccm | |||
*N<sub>2</sub>: 100 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 1000 W | |||
*Time (single wafer): 20-30 minutes | |||
*Time (full boat): 90 minutes | |||
===Process development notes=== | |||
[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Information about process development for plasma asher 04 and plasma asher 05 can be found here.]] | |||
'''Processes specifically only for plasma asher 5:'''<br> | '''Processes specifically only for plasma asher 5:'''<br> | ||