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==Manual beaker development in fumehood==
Beaker development, in fume hood 09: UV development or fume hood 10: e-beam development, is a fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools. We always recommend using, or at least trying, the automatic and semi-automatic tools, instead of using manual beaker development.


Manual beaker development is necessary for some processes, but should be avoided if possible, due to the fact that it is notoriously difficult to get a stable repeatable process - especially when multiple users are sharing the same process; everybody simply does things a bit different from each other, which leads to changes in the process outcome. Some processes have a very narrow process window, which makes them inherently sensitive to small changes in the development. The manual development also has a much greater chance of producing particles, both from the operator and the environment.


Finally the safety of the operator is at a significantly higher risk, since any manual handling of chemicals carries the risk of accidental spills with it. This is especially problematic if the developer is TMAH based, where direct skin exposure of >1% TMAH on a few percent of the body must be treated as a life-threatening event.


===Special rules for manual beaker development of TMAH===
*Automatic agitation methods are not allowed - this includes magnetic stirring or sonication
*Manual agitation methods, which create large waves or turbulence in the development solution, are not allowed
*Users must submit a risk assessment for any process requiring manual beaker development of TMAH based developers
*Users requiring manual beaker development of TMAH based developers must additionally provide valid reasons for not using the already available automatic and semi-automatic tools


===Standard manual beaker development procedure===
[[File:Beaker_development_v1.png|600px|thumb|Standard procedure for manual beaker development in fume hood:<br>1) Submerge exposed substrate into development solution<br>2) When timer ends, move substrate directly into Rinse 1<br>3) After a few seconds, move substrate into Rinse 2*<br>4) Remove developed substrate for drying<br>(*It is allowed to omit the Rinse 2 step)|right]]
The standard procedure for manual beaker development in a fume hood is as follows:
#Prepare development process
#Perform development
#Clean up


'''Prepare development process'''
*Write the chemical label, which must always be present in your chemical setup - your write your label <i>before</i> pouring the chemical
*Find the beakers required for your process
*Find the items required for holding/submerging your substrate during the process
*Find carriers or other storage units for placing your substrate after the process has finished
*Find a timer - make sure it works as you expect it to, before submerging your substrate into the development solution and discovering that the timer is in fact broken
*Get some cleanroom wipes and keep them nearby, for wiping any drops spilled during handling
*<span style="color:red">Do not cover too many of the exhaust holes in the fume hood table, as this will reduce the efficiency of the exhaust, which reduces safety</span>
*<span style="color:red">Do not place your beakers too close to the fume hood sash, as this can make it difficult to efficiently extract the fumes escaping from the beakers, which reduces safety</span>


'''Perform development'''
{{:Specific Process Knowledge/Lithography/Development/beaker_developer}}
#Put on the appropriate personal protection gear
#Pour rinsing agent into Rinse 1 and Rinse 2 beakers - typically DI water or IPA
#Pour development solution into development beaker
#Place exposed substrate in the appropriate carrier
#Set timer
#Submerge substrate into development beaker
#Start timer immediately
#When timer is 5 seconds from ending, prepare to lift the substrate out of the development beaker
#Lift substrate out of development beaker - it can help to lift it at a slight angle, to allow liquids to drain more easily from large surfaces
#Submerge it immediately into Rinse 1
#Agitate up/down for at least a few seconds
#Move substrate into Rinse 2*
#Agitate slightly
#The developed substrate can now be removed and dried


(<nowiki>*</nowiki>It is allowed to omit the Rinse 2 step)
{{:Specific Process Knowledge/Lithography/Development/SU8_developer}}


'''Clean up'''
{{:Specific Process Knowledge/Lithography/Development/manualEbeam_developer}}
*Pour Rinse 1 and Rinse 2 into appropriate waste: water goes into the sink, IPA goes into C-waste drain
*Rinse beakers with the DI-water gun
*Pour development solution into appropriate waste: solvent based developer goes into C-waste drain. <span style="color:red">NB! TMAH is an aqueous alkaline solution, which must never be mixed with solvents! TMAH waste goes into the dedicated TMAH waste container, stored in the chemical cabinet in E-4.</span>
*If your developer solution is not TMAH based:
**Rinse beaker 3 times, discard water into sink
*If your developer solution is TMAH based:
**Rinse beaker once with DI-water and discard this into the TMAH waste
**Rinse beaker two more times, discarding the water into the sink
*Hang all beakers to dry on the drying rack
*Erase the chemical label text
*Wipe any droplets on the fume hood surface
*Discard any napkins/other trash in the bin inside the fume hood


<br clear="all" />
{{:Specific Process Knowledge/Lithography/Development/manualTMAH_developer}}


==Developer: SU8 (Wet Bench)==
{{:Specific Process Knowledge/Lithography/Development/UV_developer}}
[[Image:SU8dev.JPG|400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4.]]
 
The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''
 
===Process information===
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.
 
 
Development time is strongly dependent on the SU-8 thickness.
*Minimum development time: 1 min per 20 µm in FIRST
 
 
Suggestions:
*2-5µm: 2 min. in FIRST; 2 min. in FINAL
*40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
*180-250µm: 15 min. in FIRST; 15 min. in FINAL
 
=== Equipment performance and process related parameters ===
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
*SU-8
|-
!style="background:silver; color:black;" align="center" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
mr-Dev 600
 
(PGMEA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
Single wafer holder
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
Magnetic stirrer
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
IPA
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
*100 mm wafers
*150 mm wafers, check the liquid level in the baths
*200 mm wafer, check the liquid level in the baths
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon and glass substrates
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1-6
|-
|}
 
<br clear="all" />
 
==Developer: E-beam 02==
[[Image:IMG 2464.JPG|400px|right|thumb|Developer: E-beam 02 is located in E-4.]]
 
Developer: E-beam 02 is a manually operated, single substrate puddle developer. It uses the ZED-N50 or AR 600-50 developers and IPA for rinsing. The substrates are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is then performed automatically by the equipment.
 
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' (for Developer: TMAH Manual, but it is the same model)
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login'''
 
===Process information===
All recipes use the following structure:
#Pressurize the developer canister
#Dispense puddle while rotating substrate slowly
#Puddle development while not rotating
#Agitate substrate once per 15 seconds by rotating slowly for 1 second
#Spin off developer
#Clean substrate with IPA
#Dry substrate and chamber with nitrogen
 
Multi-puddle recipes repeat steps 2-5 for the given number of puddles.
 
 
'''Process recipes'''<br>
N50 recipes have the letter "N" in them. AR-600-50 recipes have the letter "A"  in them. The number is the development time in seconds:
*01 Rinse
*02 N 15
*03 N 30
*04 N 60
*05 N 90
*06 N 120
*07 N 180
*08 N 300
*09 N 600
*10 N 2x60
*11 N 5x60
*12 A 15
*13 A 30
*14 A 60
*15 A 90
*16 A 120
*17 A 180
*18 A 300
*19 A 600
*20 A 2x60
*21 A 5x60
 
=== Equipment performance and process related parameters ===
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
*CSAR
*ZEP520A
 
|-
!style="background:silver; color:black;" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*AR 600-50
*ZED N-50
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
*Chip chuck for chips
*Non-vacuum chuck for 2" wafers
*Non-vacuum chuck for 100 mm and 150 mm wafers
*Non-vacuum chuck for 200 mm wafers
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
1 second rotational agitation at 30 rpm every 15 seconds
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
IPA
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
*Chips
*2" wafers
*100 mm wafers
*150 mm wafers
*200 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom approved materials
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
1
|-
|}
 
<br clear="all" />
 
==Developer: TMAH Manual 02==
[[Image:IMG 2464.JPG|400px|right|thumb|Developer: TMAH Manual 02 is located in E-4.]]
 
Developer: TMAH Manual 02 is a manually operated puddle developer for single wafers or chips. The wafers or chips are loaded manually one by one into the developer, but the developer dispense, puddle time, water rinse, and drying is performed automatically.
 
The development uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in  water with a small amount of wetting agent).
 
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]'''
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login'''
 
===Process information===
All recipes use the following structure:
#Pressurize the TMAH canister
#Dispense puddle while rotating substrate slowly
#Puddle development with agitation of substrate
#Spin off developer
#Clean substrate and chamber with DI water
#Dry substrate and chamber with nitrogen
 
Multipuddle recipes repeat steps 2-4 for the given number of puddles.
 
 
'''Process recipes'''<br>
(Updated 2026-01-12, JEHEM)
*-Rinse-
*1x015s
*1x030s
*1x060s
*1x120s
*2x060s
*5x060s
 
=== Equipment performance and process related parameters ===
 
{| class="wikitable"
|-
! scope=row style="text-align: left;" | Tool purpose
|
Development of UV resists:
*AZ nLOF 2020
*AZ MIR 701
*AZ 5214E
*AZ 4562
Development of DUV resists:
*KrF M230Y
*KrF M35G
|-
! scope=row style="text-align: left;" | Developer
|
AZ 726 MIF <br>
(2.38% TMAH)
|-
! scope=row style="text-align: left;" | Development method
| Puddle
|-
! scope=row style="text-align: left;" | Handling method
|
*Non-vacuum chuck for 100 mm & 150 mm wafers
*Non-vacuum chuck for chips and 50 mm wafers
|-
! scope=row style="text-align: left;" | Process temperature
| Room temperature
|-
! scope=row style="text-align: left;" | Process agitaion
| 15 cycles per minute
|-
! scope=row style="text-align: left;" | Process rinse
| DI water
|-
! scope=row style="text-align: left;" | Substrate sizes
|
*Chips
*50 mm wafers
*100 mm wafers
*150 mm wafers
|-
! scope=row style="text-align: left;" | Substrate materials
|
*All cleanroom allowed materials
*Film, or pattern, of all materials except Type IV
|-
! scope=row style="text-align: left;" | Substrate batch size
| 1
|}
<br clear="all" />
 
==Developer TMAH UV-lithography==
 
[[Image:SUSS DEV.JPG|400px|right|thumb|Developer: TMAH UV-lithography is located in E-4.]]
 
Developer TMAH UV-lithography was released Q4 2014.
 
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|developer chuck size and hotplate pin positions]].
 
'''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]'''
 
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager] - '''requires login'''
 
===[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing|Process Information]]===
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing#General_Process_Information|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
 
=== Equipment performance and process related parameters ===
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
!style="background:silver; color:black;" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|-
!style="background:silver; color:black;" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" |
AZ 726 MIF
 
(2.38% TMAH in water)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
Vacuum chuck
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
Rotation
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
Silicon and glass substrates
 
Film or pattern of all except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1-25
|-
|}
<br clear="all" />


{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Development"