Specific Process Knowledge/Pattern Design: Difference between revisions
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===Alignment marks location=== | ===Alignment marks location=== | ||
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]] | For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]] | ||
* | *For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y) | ||
*For Top Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y) | |||
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=== Alignment marks for E-beam lithography === | === Alignment marks for E-beam lithography === | ||
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]] | If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]] | ||