Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/C1 Furnace Anneal Oxide|C1 Furnace Anneal Oxide]] - ''For oxidation and annealing, up to 6" wafer'' | *[[/C1 Furnace Anneal Oxide|C1 Furnace Anneal Oxide]] - ''For oxidation and annealing, up to 6" wafer'' | ||
*[[/C2 Furnace Gate Oxide|C2 Furnace Gate Oxide]] - ''For growing of Gate Oxide on new wafers'' | *[[/C2 Furnace Gate Oxide|C2 Furnace Gate Oxide]] - ''For growing of Gate Oxide on new wafers'' | ||
*[[/C3 Furnace Anneal Bond|C3 Furnace Anneal Bond]] - ''For annealing of bonded wafers | *[[/C3 Furnace Anneal Bond|C3 Furnace Anneal Bond]] - ''For annealing and annealing of bonded wafers'' | ||
*[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | *[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | ||
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing'' | *[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing'' | ||
*[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide'' | *[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide'' | ||
*[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | *[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | ||