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[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D: Recipe, specifications and results]]
[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D: Recipe, specifications and results]]
=== SOI etch ===
The SOI etch uses the Low frequency (LF) platen generator to minimize the notching at buried stop layers such as the BOX layer in a SOI wafer.
[[Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch|SOI etch: Recipe, specifications and results]]
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process B specifications'''
|-
! Parameter
! Specification
! Average result
|-
! Etch rate (µm/min) 
| > 10
| 10.7
|-
! Etched depth (µm)
| 100
| 107
|-
! Scallop size (nm)
| < 800
| 685
|-
! Profile (degs)
| 91 +/- 1
| 90.7
|-
! Selectivity to AZ photoresist
| > 100
| 183
|-
! Undercut (µm)
| <1.5
| 0.89
|-
! Uniformity (%)
| < 3.5
| 2.7
|-
! Repeatability (%)
| <4
| 0.47
|-
|}
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process B recipe'''
|-
|-
! width="120" | Main etch (D->E) 
! width="120" | Etch
! width="120" | Dep
|-
! Gas flow (sccm)
| SF<sub>6</sub> 350 O<sub>2</sub>  35
| C<sub>4</sub>F<sub>8</sub> 200
|-
! Cycle time (secs)
| 7.0
| 4.0
|-
! Pressure (mtorr)
| 20 (1.5 s) 100
| 25
|-
! Coil power (W)
| 2800
| 2000
|-
! Platen power (W)
| 130 (1.5) 40
| 0
|-
! Cycles 
| colspan="2" | 55 (process time 10:05)
|-
! Common
| colspan="2" | Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
|}


== Nanoetching ==
== Nanoetching ==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus"