Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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 # During the reminder of  the cycle the platen power is kept constant at 45 W.
+=== Process A ===
+Process A is labelled ''Large trench (80μm wide) 150μm depth''. In the acceptance test the process was run on a 150 mm wafer with 12-13 % etch load. The tables below show
+* The specifications and the results achieved
+* The recipe
 {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
-|+ '''Process A'''
+|+ '''Process A specifications'''
+|-
+! Parameter
+! Specification
+! Average result
+|-
+! Etch rate (µm/min)
+| > 15
+| 18.9
+|-
+! Etched depth (µm)
+| 150
+| 189.1
+|-
+! Scallop size (nm)
+| < 800
+| 718
+|-
+! Profile (degs)
+| 91 +/- 1
+| 91.1
+|-
+! Selectivity to AZ photoresist
+| > 150
+| 310
+|-
+! Undercut (µm)
+| <1.5
+| 0.84
+|-
+! Uniformity (%)
+| < 3.5
+| 3.0
+|-
+! Repeatability (%)
+| <4
+| 0.43
+|-
+|}
+{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
+|+ '''Process A recipe'''
 |-
 !