Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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The second process chamber called PC3 consists of two KJLC Torus® 3" magnetron sputtering sources and one height-adjustable KJLC Torus® 4" magnetron sputtering source, also with the possibility of RF, DC, Pulse DC and HiPIMS sputtering. It is possible to apply an RF bias on the substrate, which can be used to clean the substrate before the deposition or used during the deposition to alter the film properties. The chamber allows co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply. A residual gas analyzer (RGA) mounted on the chamber allows monitoring post-process chemical gas traces. In order to operate the analyzer, the chamber should be pumped to base pressure. | The second process chamber called PC3 consists of two KJLC Torus® 3" magnetron sputtering sources and one height-adjustable KJLC Torus® 4" magnetron sputtering source, also with the possibility of RF, DC, Pulse DC and HiPIMS sputtering. It is possible to apply an RF bias on the substrate, which can be used to clean the substrate before the deposition or used during the deposition to alter the film properties. The chamber allows co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply. A residual gas analyzer (RGA) mounted on the chamber allows monitoring post-process chemical gas traces. In order to operate the analyzer, the chamber should be pumped to base pressure. | ||
<gallery caption="Process chamber PC 3" widths=" | <gallery caption="Process chamber PC 3" widths="400px" heights="350px" perrow="2"> | ||
image:PC3_photo.png| Photo of the chamber. | image:PC3_photo.png| Photo of the chamber. | ||
image:PC3_during_sputtering.png| Deposition from source 2. | image:PC3_during_sputtering.png| Deposition from source 2. | ||