Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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==Reactive p-DC Sputtering of Aluminium Nitride (AlN)== | ==Reactive p-DC Sputtering of Aluminium Nitride (AlN)== | ||
[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both Sc and Al at different powers to get ScAlN thin films. | [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium/Sc Sputtering in Cluster Lesker PC3|Sc]] and Al at different powers to get ScAlN thin films. | ||
==Comparison of the methods for deposition of AlN== | ==Comparison of the methods for deposition of AlN== | ||