Specific Process Knowledge/Pattern Design: Difference between revisions
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The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching. | The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching. | ||
*Mask aligner: | *Mask aligner: | ||
**[[Media:Alignmentkeys1.cif|Alignment marks 1 .cif]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file'' | **[[Media:Alignmentkeys1.cif|Alignment marks 1 (.cif)]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file'' | ||
**[[Media:Alignmentkeys1.tdb|Alignment marks 1 .tdb]] - ''You need the program "L-Edit" to open this file'' | **[[Media:Alignmentkeys1.tdb|Alignment marks 1 (.tdb)]] - ''You need the program "L-Edit" to open this file'' | ||
*Maskless aligner: | *Maskless aligner: | ||
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]] | **[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]] | ||
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**[[Media:AlignmentMark KOH.gds|Alignment mark for multiple layers, Layer 1 for etch in KOH (.gds)]] | **[[Media:AlignmentMark KOH.gds|Alignment mark for multiple layers, Layer 1 for etch in KOH (.gds)]] | ||
<br> | <br> | ||
===Alignment marks location=== | ===Alignment marks location=== | ||
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]] | For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]] | ||