Specific Process Knowledge/Lithography/Descum: Difference between revisions
| Line 124: | Line 124: | ||
*Pressure (DSC): 1.3 mbar | *Pressure (DSC): 1.3 mbar | ||
*Power: 200 W | *Power: 200 W | ||
*Chamber temperature at start: 30°C | *Chamber temperature at start (with door closed): 30°C | ||
*Time (single wafer): 5-10 minutes = 35-72 nm ashed | *Time (single wafer): 5-10 minutes = 35-72 nm ashed | ||
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed | *Time (multiple wafers): 10-15 minutes = 40-80 nm ashed | ||