Specific Process Knowledge/Lithography/Descum: Difference between revisions
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==Single wafer ashing rate an uniformity== | |||
[[File:PA_descum_single_v3.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | [[File:PA_descum_single_v3.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | ||
'''Single wafer ashing rate'''<br> | '''Single wafer ashing rate'''<br> | ||
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| Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8 | | Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8 | ||
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'''Single wafer non-uniformity'''<br> | '''Single wafer non-uniformity'''<br> | ||
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==Multi wafer ashing rate and uniformity== | |||
[[File:PA_descum_multi_v3.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | [[File:PA_descum_multi_v3.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | ||
'''Multi wafer ashing rate'''<br> | '''Multi wafer ashing rate'''<br> | ||
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| Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3 | | Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3 | ||
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'''Multi wafer non-uniformity'''<br> | '''Multi wafer non-uniformity'''<br> | ||
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==Comparison between single substrate processing and multi substrate processing== | |||
Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity: | Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity: | ||
<gallery mode="packed-hover" heights="150"> | <gallery mode="packed-hover" heights="150"> | ||