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Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/End point: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,304 edits
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=== End point signal===
=== End point signal===
====Barc etch====
====Barc etch====
The End point signal shows a top point after 5.5 s and I stopped the etch after 46.4 s giving ''' 41 s after the top point'''.
The End point signal shows a top point after 5.0 s and I stopped the etch after 60 s.


<gallery caption="S047676 47s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">
<gallery caption="S047676 60s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">


File:20250213_02_endpoint.jpg
File:20250213_02_endpoint.jpg
Line 110: Line 110:


====Cr etch====
====Cr etch====
The End point signal shows a drop after 295 s and I stopped the etch after 465 s giving '''170 s after the drop started'''.
The End point signal shows a drop after 264 s and I stopped the etch after 7:45 min


<gallery caption="S047676 7:43 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">
<gallery caption="S047676 7:45 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">


File:20250213_04_droppoint.jpg
File:20250213_04_droppoint.jpg
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