Specific Process Knowledge/Lithography/Descum: Difference between revisions
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=Plasma Asher 4= | =Plasma Asher 4= | ||
==Descum processing in plasma asher 4 & 5== | ==Descum processing in plasma asher 4 & 5== | ||
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. | Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.<br> | ||
When running multiple wafers, the first and last wafers should always be dummy wafers. | |||
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | ||
'''Typical descum parameters''' | |||
*O<sub>2</sub>: 100 sccm | |||
*N<sub>2</sub>: 100 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 200 W | |||
*Chamber temperature at start: 30°C | |||
*Time (single wafer): 5-10 minutes = 35-72 nm ashed | |||
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed | |||
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<br clear="all" /> | <br clear="all" /> | ||
<hr> | |||
[[File:PA_descum_single_v2.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | [[File:PA_descum_single_v2.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | ||
'''Single wafer | '''Single wafer ashing rate'''<br> | ||
{| class="wikitable" | {| class="wikitable" | ||
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| Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8 | | Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8 | ||
|} | |||
'''Single wafer non-uniformity'''<br> | |||
{| class="wikitable" | |||
|- | |||
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15 | |||
|- | |- | ||
| Film thickness range, before descum [nm]: || 11 || 12 || 10 || 11 || 9 | | Film thickness range, before descum [nm]: || 11 || 12 || 10 || 11 || 9 | ||
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<br clear="all" /> | <br clear="all" /> | ||
<hr> | |||
[[File:PA_descum_multi_v2.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | [[File:PA_descum_multi_v2.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | ||
'''Multi wafer | '''Multi wafer ashing rate'''<br> | ||
{| class="wikitable" | {| class="wikitable" | ||
|- | |- | ||
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|- | |- | ||
| Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3 | | Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3 | ||
|} | |||
'''Multi wafer non-uniformity'''<br> | |||
{| class="wikitable" | |||
|- | |||
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15 | |||
|- | |- | ||
| Film thickness range, before descum [nm]: || 11 || 13 || 11 || 12 || 14 | | Film thickness range, before descum [nm]: || 11 || 13 || 11 || 12 || 14 | ||
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<br clear="all" /> | <br clear="all" /> | ||
<hr> | |||
=Plasma Asher 5= | =Plasma Asher 5= | ||
<span style="color:red">Coming soon</span> | <span style="color:red">Coming soon</span> | ||