Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14: Difference between revisions

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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs
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{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||168||182||185||189||191||183||9
|-
| Sidewall angle||degs||91||91||91||91||90||91||0
|-
| CD loss||nm/edge||7||-3||-3||-25||-26||-10||15
|-
| CD loss foot||nm/edge||12||9||10||-11||1||4||9
|-
| Bowing||||9||6||4||5||7||6||2
|-
| Bottom curvature||||-47||-34||-34||-26||-19||-32||10
|-
| zep||nm/min||||||||||||67||
|-
|
|}

Revision as of 13:48, 10 May 2011

The nano1.4 recipe

Recipe nano1.4
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2000
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 77 nm



Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 168 182 185 189 191 183 9
Sidewall angle degs 91 91 91 91 90 91 0
CD loss nm/edge 7 -3 -3 -25 -26 -10 15
CD loss foot nm/edge 12 9 10 -11 1 4 9
Bowing 9 6 4 5 7 6 2
Bottom curvature -47 -34 -34 -26 -19 -32 10
zep nm/min 67