Specific Process Knowledge/Lithography/Descum: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 109: / Line 109: @@
 =Plasma Asher 4=
-<span style="color:red">Coming soon</span>
+==Process gas ratio for plasma asher 4 & 5==
+[[File:PA_descum_single_v1.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]
+[[File:PA_descum_multi_v1.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]
+The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
+Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.
+{| class="wikitable"
+|-
+! Test setup !! Single substrate !! Center of 3 substrates
+|-
+! scope=row| Test results
+| Ashing rate: 5.7 ±2.1 µm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 µm/min<br>Non-uniformity: 0.4 ±0.2%
+|-
+! scope=row| Wafers
+| 1 || 3
+|-
+! scope=row| Wafer size
+| 100 mm || 100 mm
+|-
+! scope=row| Boat position
+| Center of chamber || Center of chamber
+|-
+! scope=row| Test wafer position
+| Center of boat || Center of boat
+|-
+! scope=row| Total gas flow rate
+| 200 sccm || 200 sccm
+|-
+! scope=row| Gas mix ratio
+| 50% N<sub>2</sub> || 50% N<sub>2</sub>
+|-
+! scope=row| Chamber pressure
+| 1.3 mbar || 1.3 mbar
+|-
+! scope=row| Power
+| 200 W || 200 W
+|-
+! scope=row| Test processing time
+| Tested parameter || Tested parameter
+|-
+! scope=row| Test average temperature
+| 33°C || 33°C
+|}
+<br clear="all" />
 =Plasma Asher 5=
 <span style="color:red">Coming soon</span>