[[File:Descum Results aug 2019.png|640px|thumb|right|Descum results plasma asher 1. September 2019]]
<span style="color:red">This tool has been decomissioned 2024-12-02.</span>
<span style="color:red">This tool has been decommissioned 2024-12-02.</span>
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login'''
==[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool]]==
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
[[Image:PA1_descum.jpg|640px|thumb|Descum results plasma asher 1. August 2021]]
Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
'''Recipe settings:'''<br>
Note: plasma Asher was cold before use.
*O2 flow: 70 ml/min
*N2 flow: 70 ml/min
Power: 150 W
Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.
The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login
Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
recipe 1:
O2 flow: 100 ml/min
N2 flow: 100 ml/min
Power: 150 W
Ashing time (min)
1
2
3
4
6
7
8
9
10
12
14
15
20
Etched Thickness (nm)
8,7
5,1
12,5
6,2
31,8
86,0
25,7
46,8
38,3
49,7
59,4
140,1
360,7
Initial temperature (°C)
28
21
31
21
22
28
25
24
21
24
24
22
22
Descum results plasma asher 2 - recipe 2
recipe 2:
O2 flow: 500 ml/min
N2 flow: 0 ml/min
Power: 200 W
Ashing time (min)
1
2
3
4
5
6
7
8
10
12
15
20
Etched Thickness (nm)
8,1
9,4
16,8
55,2
44,0
47,5
42,5
55,1
85,3
122,4
184,8
305,9
Initial temperature (°C)
22
21
21
22
22
22
21
21
20
21
21
22
A linear time dependence was observed after etching 7 minutes or more (recipe 2).
Plasma Asher 3: Descum
The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
