Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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Revision as of 10:45, 29 August 2024
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All contents by Nanolab staff.
Deposition of Titanium Oxide
Titanium oxide can be deposited at Nanolab by sputtering, e-beam deposition, or ALD (atomic layer deposition). In sputtering and e-beam deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry. The oxygen flow in e-beam evaporation is lower than in sputtering, so it may not be possible to obtain fully oxidized TiO2, though we have not yet verified this.
- TiO2 deposition using ALD
- TiO2 deposition using Sputter-System Metal-Oxide(PC1)
- TiO2 deposition in Sputter System (Lesker)
We also used to have the option to sputter-deposit TiO2 with the IBE/IBSD Ionfab300.
Comparison of the methods for deposition of Titanium Oxide
E-beam evaporator (10-pockets) | Sputter-system Metal-Oxide(PC1) | Sputter-System(Lesker) | ALD Picosun 200 | |
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Generel description |
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Stoichiometry and form |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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ALD1: ALD2: | |
Substrate size |
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ALD1:
ALD2:
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Allowed materials |
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