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Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples: Difference between revisions

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Arrays of circular holes can be created by normal area writing of a mask of circular structures, this is illustrated in the left side of the figure below. In this case the drawn circles are filled with beam shots, just like for any other area based exposure. For large arrays this can however be quite slow and hence it can be faster to write circles with local overexposure of single beam shots, i.e. a setup where the beam is pitched at the required circle pitch and the beam dwells at each site to produce a circle of the required size. In this approach dwell times will typically be in the order of several 100 ns to a few µs.
Arrays of circular holes can be created by normal area writing of a mask of circular structures, this is illustrated in the left side of the figure below. In this case the drawn circles are filled with beam shots, just like for any other area based exposure. For large arrays this can however be quite slow and hence it can be faster to write circles with local overexposure of single beam shots, i.e. a setup where the beam is pitched at the required circle pitch and the beam dwells at each site to produce a circle of the required size. In this approach dwell times will typically be in the order of several 100 ns to a few µs.


 
The single shot approach is illustrated in the center and right parts of the figure below as there are two ways to go about this.
The concept is illustrated below. On the left side is the standard area exposure where the circles are drawn as circles and filled with beam shots. In the center
'''Big box approach''': This approach is illustrated in the center of the figure below. The mask is a single box of the desired size of the array. The beam is then pitched with the SHOT x, n command where n determines the beam pitch and hence the pitch of the resulting circles.
'''Small box approach''': This is illustrated on the right side of the figure. In this approach each circle is represented by a small 2x2 nm box, hence the pattern is an array of these small boxes and the beam pitch is set higher than the size of the box to produce a single beam shot in each box.


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==Big box approach==
==Small box approach==


You can read more about this method in the linked article.
You can read more about this method in the linked article.