Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions
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==Alignment accuracy== | ==Alignment accuracy== | ||
Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y. | Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y. | ||
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;" | |||
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| [[image:thope231127thin07.tif|400px]] | [[image:thope231127thin08.tif|400px]] | [[image:thope231127thin03.tif|400px]] | |||
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Left and center: Vernier scales for measurement of alignment accuracy. Right: Waveguide where the left side is written by UV and the right side by E-beam. | |||
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=Mix-and-match resists= | =Mix-and-match resists= | ||