Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions
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=Methods= | =Methods= | ||
There are two methods for aligning the two patterns to each other, these are illustrated below. | There are two methods for aligning the two patterns to each other, these are illustrated below. In both cases the resist is developed after the second exposure. | ||
*Method 1: In the first method an alignment mark is already present on the substrate and the two exposures are simply both aligned to this and hence they will be aligned to each other. | *Method 1: In the first method an alignment mark is already present on the substrate and the two exposures are simply both aligned to this and hence they will be aligned to each other. | ||