Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
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[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | [[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | ||
Revision as of 10:06, 4 September 2023
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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated
Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Measured results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Average etch of SRN on 6" wafer | 166 nm/min [+- 17% over a 6" wafer] | 142 nm/min [+- 9% over a 6" wafer] |
| Etch rate of Si3N4 | ? | ? |
| Etch rate of SiO2 | 250 nm/min [+- 3% over a 6" wafer] | 306 nm/min [on small piece] |
| Etch rate in Si | ?nm/min | ? nm/min |
| Etch rate of Mir resist | ? nm/min | ? nm/min |
Etch rate uniformity
- SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers
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