Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
| Line 84: | Line 84: | ||
|} | |} | ||
===Etch rate uniformity=== | ===Etch rate uniformity=== | ||
<gallery caption="SRN etch uniformity with recipes optimized for SiO2 etching" widths="400px" heights="250px" perrow="2"> | <gallery caption="SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers" widths="400px" heights="250px" perrow="2"> | ||
File:SRN etch uniformity SiO2_res_10.jpg | File:SRN etch uniformity SiO2_res_10.jpg | ||
File:SRN etch uniformity DOE2_Post_II_21.jpg | File:SRN etch uniformity DOE2_Post_II_21.jpg | ||
</gallery> | </gallery> | ||
Revision as of 13:17, 22 August 2023
Feedback to this page:
click here
Template:CC1
THIS PAGE IS UNDER CONSTRUCTION
Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Typical results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Average etch of SRN on 6" wafer | 166 nm/min [+- 17% over a 6" wafer] | 142 nm/min [+- 9% over a 6" wafer] |
| Etch rate of Si3N4 | ? | ? |
| Etch rate of SiO2 | 250 nm/min [+- 3% over a 6" wafer] | 306 nm/min [on small piece] |
| Etch rate in Si | ?nm/min | ? nm/min |
| Etch rate of Mir resist | ? nm/min | ? nm/min |
Etch rate uniformity
- SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers
-
-
