Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
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| | |Average etch of SRN on 6" wafer | ||
| | |166 nm/min [+- 17% over a 6" wafer]''' | ||
|142 nm/min [+- 9% over a 6" wafer]''' | |||
|- | |- | ||
|Etch rate of Si3N4 | |Etch rate of Si3N4 | ||
| | |? | ||
| | |? | ||
|- | |- | ||
|Etch rate of SiO2 | |Etch rate of SiO2 | ||
| | |250 nm/min [+- 3% over a 6" wafer] | ||
| | |306 nm/min [on small piece] | ||
|- | |- | ||
|Etch rate in Si | |Etch rate in Si | ||
| | |?ñm/min | ||
| | |? nm/min | ||
|- | |- | ||
|Etch rate of Mir resist | |Etch rate of Mir resist | ||
|''' | |'''?nm/min | ||
|''' | |'''? nm/min | ||
|- | |- | ||
|} | |} | ||
Revision as of 12:13, 22 August 2023
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Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Typical results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Average etch of SRN on 6" wafer | 166 nm/min [+- 17% over a 6" wafer] | 142 nm/min [+- 9% over a 6" wafer] |
| Etch rate of Si3N4 | ? | ? |
| Etch rate of SiO2 | 250 nm/min [+- 3% over a 6" wafer] | 306 nm/min [on small piece] |
| Etch rate in Si | ?ñm/min | ? nm/min |
| Etch rate of Mir resist | ?nm/min | ? nm/min |
Etch rate uniformity
- SRN etch uniformity with recipes optimized for SiO2 etching
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