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Typical results	SiO2_res_10	DOE2/Post_II_21
Etch of SRN	~43nm/min [measured 39-50 nm/min over a 6" wafer]	23-25 nm/min [4" on carrier]]
Etch rate of Si3N4	~49 nm/min [4" on carrier]	24-26 nm/min [4" on carrier]
Etch rate of SiO2	~42nm/min [41-43 nm/min over a 6" wafer]	13.7-14.7 nm/min [4" on carrier]
Etch rate in Si	ñm/min	11-13 nm/min (10% load, 4" wafer on 6" carrier)
Etch rate of Mir resist	~nm/min	~17 nm/min
Tested etch time without burning the resist	3 min (6 min => resist burned)	30 min
Profile [^o]

@@ Line 12: / Line 12: @@
 {| border="2" cellspacing="2" cellpadding="3"
 !Parameter
-|Recipe name: '''Slow Etch'''
+|Recipe name: '''SiO2_res_10'''
-|Recipe name: '''Slow Etch2'''
+|Recipe name: '''DOE2/Post_II_21'''
 |-
 |Coil Power [W]
-|350
+|2500
 |200
 |-
 |Platen Power [W]
-|25
+|300
 |50
@@ Line 32: / Line 32: @@
 |-
 |H2 flow [sccm]
+|25.6
 |15
-|15
+|-
+|He flow [sccm]
+|448.7
+|0
 |-
-|CF<sub>4</sub> flow [sccm]
+|C<sub>4</sub>F<sub>8</sub> flow [sccm]
-|30
+|25.6
 |30
 |-
 |Pressure [mTorr]
-|3
+|8.8
 |10
@@ Line 50: / Line 54: @@
 {| border="2" cellspacing="2" cellpadding="3"
 !Typical results
-!'''Slow Etch'''
+!'''SiO2_res_10'''
-!'''Slow Etch2'''
+!'''DOE2/Post_II_21'''
 |-