Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions

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 ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
+{| border="2" cellspacing="2" cellpadding="3"
+!Parameter
+|Recipe name: '''Slow Etch'''
+|Recipe name: '''Slow Etch2'''
+|-
+|Coil Power [W]
+|350
+|200
+|-
+|Platen Power [W]
+|25
+|50
+|-
+|Platen temperature [<sup>o</sup>C]
+|20
+|20
+|-
+|H2 flow [sccm]
+|15
+|15
+|-
+|CF<sub>4</sub> flow [sccm]
+|30
+|30
+|-
+|Pressure [mTorr]
+|3
+|10
+|-
+|}
+{| border="2" cellspacing="2" cellpadding="3"
+!Typical results
+!'''Slow Etch'''
+!'''Slow Etch2'''
+|-
+|Etch of SRN
+|'''~43nm/min [measured 39-50 nm/min over a 6" wafer]
+|'''23-25 nm/min [4" on carrier]]
+|-
+|Etch rate of Si3N4
+|'''~49 nm/min [4" on carrier]
+|'''24-26 nm/min [4" on carrier]
+|-
+|Etch rate of SiO2
+|'''~42nm/min [41-43 nm/min over a 6" wafer]
+|'''13.7-14.7 nm/min [4" on carrier]
+|-
+|Etch rate in Si
+|'''ñm/min
+|'''11-13 nm/min (10% load, 4" wafer on 6" carrier)
+|-
+|Etch rate of Mir resist
+|'''~nm/min
+|'''~17 nm/min
+|-
+|Tested etch time without burning the resist
+|3 min (6 min => resist burned)
+|30 min
+|-
+|Profile [<sup>o</sup>]
+|
+|
+|-
+|}