Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | ||
'''E stack furnaces:''' | '''E stack furnaces:''' | ||
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*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | *[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | ||
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | *[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | ||
== Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | == Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | ||