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Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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'''Special features'''
'''Special features'''
*High resolution (Write Mode I, Optical Autofocus)
*Optical Autofocus
*Backside Alignment
*Backside Alignment
*Basic Gray Scale Exposure
*Basic Gray Scale Exposure
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*High Aspect Ratio Mode for exposure of thick resists
*High Aspect Ratio Mode for exposure of thick resists
*200 x 200 mm exposure field
*200 x 200 mm exposure field
 
*Separate conversion PC
 
'''<span style="color:red">Special restrictions</span>'''
*No pneumatic autofocus
*405 nm laser is not allowed
*Soft resists are not allowed
*Resist thickness must be ≤10 µm
*No crystal bonded chips
*Thickness variations across the substrate must be <50 µm
*Wafer bow must be <50 µm




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!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure  
Alignment and UV exposure  
|-
|-
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|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
Projection
|-
|-
| style="background:LightGrey; color:black"|Exposure light
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*375 nm
*375 nm<br>
*<s>405 nm</s> NOT ALLOWED
(laser diode arrays)
(laser diode arrays)
|-
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Optical
*Optical
*<s>Pneumatic</s> DISABLED
*Pneumatic
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 600nm <sup>1)</sup>
down to 1 µm
 
<span style="color:red">OBS! In March 2023, MLA2 will be rebuilt to 1 µm resolution.</span>
|-
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*'''GDS-II'''
*CIF
*CIF
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|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment
*Top side alignment
*Backside alignment
*Backside alignment
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 200x200 mm<sup>2</sup>
* maximum writing area: 200x200 mm<sup>2</sup>
* 200 mm wafer
* 200 mm wafer
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|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
All cleanroom materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
1  
1  
|-  
|-  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure"