Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
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Beamer uses a node based system where each node performs an action on the pattern. In this simple example we will just have an import node to import our GDS file and connect it to an export node to output it as V30. The setup is thus as simple as can be and will look like below. | Beamer uses a node based system where each node performs an action on the pattern. In this simple example we will just have an import node to import our GDS file and connect it to an export node to output it as V30. The setup is thus as simple as can be and will look like below. | ||
[[File:BEAMER_lJDTeECL5G.png|800px|center|frameless]] | [[File:BEAMER_lJDTeECL5G.png|800px|center|frameless]] | ||
Each node has several options and these can be changed by double clicking the node. For the export node we will need to choose the correct machine in "Machine Type" | |||
Each node has several options and these can be changed by double clicking the node. For the export node we will need to choose the correct machine in "Machine Type", the DTU Nanolab system is "JBX-9500FS (100kV)". On the advanced tab we will choose "Floating" field ordering and "Center to Field". This will ensure that our features/pattern will be written in the center of the writing field. The setup will look like the parameters below. | |||
[[File:BEAMER_setup.png|800px|center|frameless]] | [[File:BEAMER_setup.png|800px|center|frameless]] | ||
PEC is a complex topic and we shall only touch upon it lightly in this guide. The need for PEC arises from the fact that the high energy incident electrons to some extend will back scatter from the sample or cause secondary electrons from the sample to interact with the resist and cause a secondary exposure of the resist. On a silicon substrate this secondary exposure can lead to exposure of the resist up to 30 µm away from the incident beam. Due to this areas with dense patterns will receive a relative high secondary exposure compared to sparse patterns and thus a higher total dose. To mitigate this a Proximity Effect Correction is applied to intentionally reduce the dose on dense patterns and ensure all pattern elements receive the same dose. | PEC is a complex topic and we shall only touch upon it lightly in this guide. The need for PEC arises from the fact that the high energy incident electrons to some extend will back scatter from the sample or cause secondary electrons from the sample to interact with the resist and cause a secondary exposure of the resist. On a silicon substrate this secondary exposure can lead to exposure of the resist up to 30 µm away from the incident beam. Due to this areas with dense patterns will receive a relative high secondary exposure compared to sparse patterns and thus a higher total dose. To mitigate this a Proximity Effect Correction is applied to intentionally reduce the dose on dense patterns and ensure all pattern elements receive the same dose. | ||