Jump to content

Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,931 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,931 edits
Line 807: Line 807:
The Aligner: Maskless 03 has a 405 nm laser light source with a FWHM of ~1 nm.
The Aligner: Maskless 03 has a 405 nm laser light source with a FWHM of ~1 nm.


{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|-
|-


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Resist/UVresist"