Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions

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 '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment#Oven_250C click here]'''
 [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment in Cx-1]]
-The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap.
+The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven.
 '''The user manual, and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=117 Oven 250C]'''
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