Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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Deposition of Silicon Oxide can be done with either LPCVD, PECVD or by sputter | Deposition of Silicon Oxide can be done with either LPCVD, PECVD or by sputter technique. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point. | ||
==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||
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PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used ex. as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in the other PECVD (PECVD1). It is also a possibility to dope the silicon oxide with Germanium for altering the refractive index of the oxide. | PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used ex. as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in the other PECVD (PECVD1). It is also a possibility to dope the silicon oxide with Germanium for altering the refractive index of the oxide. | ||
==Deposition of Silicon Oxide using sputter deposition | ==Deposition of Silicon Oxide using sputter deposition technique== | ||
At DANCHIP you can also deposit silicon oxide using [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]] sputter system. One of the advantages here is that you can | At DANCHIP you can also deposit silicon oxide using [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]] sputter system. One of the advantages here is that you can deposit on any material you like. | ||
==Comparison of the methods for deposition of Silicon Oxide== | ==Comparison of the methods for deposition of Silicon Oxide== | ||
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! LPCVD | ! LPCVD | ||
! PECVD | ! PECVD | ||
! Sputter | ! Sputter technique | ||
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| Stoichiometry | | Stoichiometry | ||
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==Choose deposition | ==Choose deposition technique== | ||
*Deposition of Silicon Oxide using LPCVD TEOS | *[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]] | ||
*Deposition of Silicon Oxide using PECVD | *[[/Deposition of Silicon Oxide using PECVD|Deposition of Silicon Oxide using PECVD]] | ||
*Deposition of Silicon Oxide using Lesker sputter tool | *[[/Deposition of Silicon Oxide using Lesker sputter tool|Deposition of Silicon Oxide using Lesker sputter tool]] | ||