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Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

Thope (talk | contribs)
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|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
|Negative
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|mr DEV
|IPA
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|-
|-style="background:WhiteSmoke; color:black"
|'''HSQ (XR-1541)'''
|Negative
|Approved. Standard negative resist
|[[media:DowCorningHSQA.pdf|HSQ Dow Corning]], [[media:MSDS HSQ.pdf|MSDS HSQ]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|
|TMAH, AZ400K:H2O
|H2O
|
|[[media:Process Flow HSQ.docx|process flow HSQ]]
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]]


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