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| |acetone/1165 | | |acetone/1165 |
| |Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process_Flow_Trilayer_Ebeam_Resist.docx]] | | |Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process_Flow_Trilayer_Ebeam_Resist.docx]] |
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| |-
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| |-style="background:LightGrey; color:black"
| |
| |'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
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| |Negative
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| |Standard negative resist
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| |[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]]
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| |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
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| |Anisole
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| |mr DEV
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| |IPA
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| |mr REM
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| |[[media:Process_Flow_mrEBL6000.docx|Process_Flow_mrEBL6000.docx]]
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| |-
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| |-style="background:WhiteSmoke; color:black"
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| |'''HSQ (XR-1541)'''
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| |Negative
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| |Approved. Standard negative resist
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| |[[media:DowCorningHSQA.pdf|HSQ Dow Corning]], [[media:MSDS HSQ.pdf|MSDS HSQ]]
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| |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
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| |
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| |TMAH, AZ400K:H2O
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| |H2O
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| |
| |[[media:Process Flow HSQ.docx|process flow HSQ]]
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| [[/High resolution patterning with HSQ|High resolution patterning with HSQ]]
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| |} | | |} |