Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions

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 Oxidation:
 *Dry oxidation using O<sub>2</sub>
-*Wet oxidation using DI Water steam injection system (Bronkhorst)
+*Wet oxidation using DI water steam injection system (Bronkhorst)
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 !style="background:silver; color:black" align="center"|Performance
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 |style="background:LightGrey; color:black"|Gas flows
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-*N<sub>2</sub>: 0-30 slm
+*N<sub>2</sub>: 0 - 30 slm
-*O<sub>2</sub>: 0-30 slm
+*O<sub>2</sub>: 0 - 30 slm
-*Steamer flow : 0-12.5 slm (Standard recipe is set at 9.5 slm)
+*Steamer flow : 0 - 12.5 slm (9.5 slm in standard recipes)
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 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
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-*1-50 150 mm or 200 mm wafers
+*1 - 50 150 mm wafers
+*1 - 50 200 mm wafers
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 | style="background:LightGrey; color:black"|Substrate materials allowed
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 *New silicon wafers
-*Wafers from A-stack furnace
+*Silicon wafers with layers of silicon oxide or silicon nitride (processed wafers should be RCA cleaned)
+*Wafers from A-stack furnaces
 *Wafers from C1 furnace
-*Silicon wafers with layers of silicon oxide or silicon nitride (RCA cleaned)
+*Wafers from the LPCVD furnaces (B- and other E-stack furnaces)
-*Wafers from the LPCVD furnaces
+*Wafers from PECVD4 (not III-V materials)
-*Wafers from PECVD4
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