Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions

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 '''BHF dip:'''
-Stripping the native oxide using BHF only works if the native oxide of the substrate is etched by BHF, and if resist has good adhesion to the substrate material itself, which basically narrows it down to silicon. A BHF dip leaves the surface of a silicon wafer hydrophobic, and the dangling Si-bonds are passivated by adsorbed H<sup>+</sup>. This means the surface will not oxidize immediately, but the lifetime of this passivation is limited, so it is recommended to spin coat the wafer within 20, maximum 45 minutes.
+Stripping the native oxide using BHF only works if the native oxide of the substrate is etched by BHF, and if resist has good adhesion to the substrate material itself, which basically limits it to silicon. A BHF dip leaves the surface of a silicon wafer hydrophobic, and the dangling Si-bonds are passivated by adsorbed H<sup>+</sup>. This means the surface will not oxidize immediately, but the lifetime of this passivation is limited, so it is recommended to spin coat the wafer within 20, maximum 45 minutes.
 '''HMDS:'''