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Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process temperature
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*0-1200 <sup>o</sup>C
Annealing temperature:
*Up to 1200 <sup>o</sup>C, but maximum 450 <sup>o</sup>C for III-V materials
**Time limits at temperatures above 700 <sup>o</sup>C:
**Time limits at temperatures above 700 <sup>o</sup>C:
***700 °C: 60 minutes
***700 °C: 60 minutes
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***1100 °C: 5 minutes
***1100 °C: 5 minutes
***1200 °C: 1 minute
***1200 °C: 1 minute
*III-V materials  to 450 <sup>o</sup>C
Temperature ramp:  
*Temperature ramp:  
*Up to 50 <sup>o</sup>C/min with susceptor
**Up to 50 <sup>o</sup>C/min with susceptor
*Up to 100 <sup>o</sup>C/min without susceptor
**Up to 100 <sup>o</sup>C/min without susceptor


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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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*1 atm
*1 atm (atmospheric pressure)
*Vacuum
*~ 0 mbar (vacuum) without any gas flow
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|style="background:LightGrey; color:black"|Gases on the system
|style="background:LightGrey; color:black"|Gases on the system
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
*Ar
*Forming gas (4 % H<sub>2</sub>/96 % <sub>N2</sub>) - Not connected yet  
*Forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) - Not connected yet  
Purge gas:  
Purge gas:  
*N<sub>2</sub> pro
*N<sub>2</sub> pro
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*200 mm wafers (less good temperature uniformity than smaller wafers/samples)
*One 200 mm wafer (less good temperature uniformity than smaller wafers/samples)
*150 mm wafers
*One 150 mm wafer
*100 mm wafers (always placed on a susceptor or dummy wafer)
*One 100 mm wafer
*50 mm wafers (always placed on a susceptor or dummy wafer)
*One or more 50 mm wafers (always placed on a susceptor or dummy wafer)
*Small samples
*One or more small samples(always placed on a susceptor or dummy wafer)
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|style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:LightGrey; color:black"|Substrate materials allowed