Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

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Jipelec - Rapid Thermal Processing

January 2021: The RTP Jipelec 2 is not released for use yet

Jipelec JetFIRST 200 RTP (Rapid Thermal Processer/Annealer).

The main purpose of the machine is to anneal different samples very rapidly. Furthermore, the machine can be used for alloying of different materials.

The machine consists of a process chamber, in which the annealing is done.

Samples can be wafers (2". 4", 6" and 8") or smaller samples made of different materials. In the process chamber, the samples are placed on quartz pins, either directly on the pins (only wafers) or on a graphite sucseptor or a Si dummy wafer.

The maximum annealing temperature is 1200 C, and the heating is done by infrared lamps. For temperatures above 600 C the annealing time is limit as can be seen in the table below.

The temperature is measured by either a thermocouple or an optical pyrometer. The temperature is regulated by a PID controller, thus the PID values will have to be optimized for each susceptor size and for each wafer size and thickness, and it is important to select the right PID table for each process.

Annealing can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing.

The user manual, user APV, technical information and contact information can be found in LabManager:

RTP Jipelec 2

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1200 ^oC Time limits at temperatures above 700 ^oC: 700 °C: 60 minutes 800 °C: 30 minutes 900 °C: 20 minutes 1000 °C: 10 minutes 1100 °C: 5 minutes 1200 °C: 1 minute III-V materials to 450 ^oC Temperature ramp: Up to 50 ^oC/min with susceptor Up to 100 ^oC/min without susceptor
	Process pressure	1 atm Vacuum
	Gases on the system	Process gases: N₂ Ar Forming gas (4 % H₂/96 % _N2) - Not connected yet Purge gas: N₂ pro
Substrates	Batch size	200 mm wafers (less good temperature uniformity than smaller wafers/samples) 150 mm wafers 100 mm wafers (always placed on a susceptor or dummy wafer) 50 mm wafers (always placed on a susceptor or dummy wafer) Small samples
Substrates	Substrate materials allowed	A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used Silicon Silicon oxide and nitride Silicon nitride Fused silica/quartz III-V materials (max 450 ^oC) - Use a dedicated susceptor Metals - Use a dedicated susceptor and ask for permission

@@ Line 10: / Line 10: @@
 [[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4]]
+''January 2021: The RTP Jipelec 2 is not released for use yet''
 Jipelec JetFIRST 200 RTP (Rapid Thermal Processer/Annealer).
-The main purpose of the machine is to anneal different samples very rapidly, or the machine can be used for alloying.
+The main purpose of the machine is to anneal different samples very rapidly. Furthermore, the machine can be used for alloying of different materials.
-The machine consists of a process chamber, in which the annealing is done. Samples are placed on quartz pins, either on a graphite sucseptor or, Si dummy wafer or directly in the chamber in the process chamber.
+The machine consists of a process chamber, in which the annealing is done.
-Samples can be 6", 4" wafers or smaller samples made of different materials. In chamber, ht ehte
+Samples can be wafers (2". 4", 6" and 8") or smaller samples made of different materials. In the process chamber, the samples are placed on quartz pins, either directly on the pins (only wafers) or on a graphite sucseptor or a Si dummy wafer.
-The maximum annealing temperature is 1200 C, and the heating is done by infrared lamps. Important: check the temperature limits in the table below.
+The maximum annealing temperature is 1200 C, and the heating is done by infrared lamps. For temperatures above 600 C the annealing time is limit as can be seen in the table below.
-Annnealings can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing.
+The temperature is measured by either a thermocouple or an optical pyrometer. The temperature is regulated by a PID controller, thus the PID values will have to be optimized for each susceptor size and for each wafer size and thickness, and it is important to select the right PID table for each process.
-In the chamber, sample are placed on quartz pins in the bottom of the chamber. 4" and 6" Si wafers can be placed directly on the quartz pins as show in the next picture, or these can be placed on a graphite susceptor. Smaller wafer and smaller samples can be placed on a Si dummy wafer or a graphite susceptor.
+Annealing can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing.
-The
-The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).