Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

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 [[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4]]
+''January 2021: The RTP Jipelec 2 is not released for use yet''
 Jipelec JetFIRST 200 RTP (Rapid Thermal Processer/Annealer).
-The main purpose of the machine is to anneal different samples very rapidly, or the machine can be used for alloying.
+The main purpose of the machine is to anneal different samples very rapidly. Furthermore, the machine can be used for alloying of different materials.
-The machine consists of a process chamber, in which the annealing is done. Samples are placed on quartz pins, either on a graphite sucseptor or, Si dummy wafer or directly in the chamber in the process chamber.
+The machine consists of a process chamber, in which the annealing is done.
-Samples can be 6", 4" wafers or smaller samples made of different materials. In chamber, ht ehte
+Samples can be wafers (2". 4", 6" and 8") or smaller samples made of different materials. In the process chamber, the samples are placed on quartz pins, either directly on the pins (only wafers) or on a graphite sucseptor or a Si dummy wafer.
-The maximum annealing temperature is 1200 C, and the heating is done by infrared lamps. Important: check the temperature limits in the table below.
+The maximum annealing temperature is 1200 C, and the heating is done by infrared lamps. For temperatures above 600 C the annealing time is limit as can be seen in the table below.
-Annnealings can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing.
+The temperature is measured by either a thermocouple or an optical pyrometer. The temperature is regulated by a PID controller, thus the PID values will have to be optimized for each susceptor size and for each wafer size and thickness, and it is important to select the right PID table for each process.
-In the chamber, sample are placed on quartz pins in the bottom of the chamber. 4" and 6" Si wafers can be placed directly on the quartz pins as show in the next picture, or these can be placed on a graphite susceptor. Smaller wafer and smaller samples can be placed on a Si dummy wafer or a graphite susceptor.
+Annealing can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing.
-The
-The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).