Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
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{| | A | B|- | C| D|}Available gasses and gas chemistry | {| | A | B|- | C| D|}Available gasses and gas chemistry | ||
|ItemConfiguration= | |ItemConfiguration= | ||
* SF6: 50 sccm | |||
* O2: 50 sccm | |||
* Ar: 283 sccm | |||
* N2: 500 sccm | |||
* He: 11 sccm | |||
* CO2: (It is not in the software) | |||
|ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | |ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | ||
|} | |} | ||
Revision as of 10:21, 14 December 2020
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This system is a research tool and not available to the users
If you want to get access to the tool, then talk to professor Henry Jansen
Current setup and rules on Pegasus 2
Click here to access older configurations.
The current configuration is
{{Template:Peg2configcontent1Item | The currently applied modification | Comments |
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ItemName=
Access to Pegasus 2 configuration templatesPegasus 2 configuration table version 1
|