Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
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|ItemName= Available gasses and gas chemistry | |ItemName= Available gasses and gas chemistry | ||
|ItemConfiguration= | |ItemConfiguration= | ||
{| C<sub>4</sub>F<sub>8</sub> (H2 currently fitted but closed) : 0 sccm | {| border="0" cellpadding="1" cellspacing="1" | ||
| colspan="3"| C<sub>4</sub>F<sub>8</sub> (H2 currently fitted but closed) : 0 sccm | |||
|- | |||
| SF6: 50 sccm | | SF6: 50 sccm | ||
| O2: 50 sccm | | O2: 50 sccm | ||
| Ar: 283 sccm | |||
|- | |- | ||
| N2: 500 sccm | | N2: 500 sccm | ||
| He: 11 sccm | | He: 11 sccm | ||
| CO2: (It is not in the software) | |||
|- | |- | ||
|} | |} | ||
|ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | |ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | ||