Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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![[Specific Process Knowledge/Etch/III-V RIE |III-V RIE]] | ![[Specific Process Knowledge/Etch/III-V RIE |III-V RIE]] | ||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
![[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4|DRIE Pegasus 4]] | |||
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP metal]] | ![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP metal]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
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*Anisotropic etch: almost vertical sidewalls | *Anisotropic etch: almost vertical sidewalls | ||
*We prefer that SiO2 etch takes place in the | | | ||
*Anisotropic etch: almost vertical sidewalls | |||
*We prefer that SiO2 etch on 6" wafers takes place in the Pegasus 4. | |||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
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*Aluminium | *Aluminium | ||
*Chromium (Please try to avoid this) | *Chromium (Please try to avoid this) | ||
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*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Si | |||
*Silicon Nitride | |||
*Chromium (ask for permission) | |||
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*Photoresist | *Photoresist | ||
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*Process dependent | *Process dependent | ||
*Tested range: ~60nm/min - ~550nm/min | *Tested range: ~60nm/min - ~550nm/min | ||
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*Process dependent | |||
<500nm/min | |||
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*Process dependent | *Process dependent | ||
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*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | ||
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*As many small samples as can be bonded on a 150mm wafer | |||
*<nowiki>#</nowiki>1 50 mm wafer bonded on a 150mm wafer | |||
*<nowiki>#</nowiki>1 100 mm wafer bonded on a 150nm wafer | |||
*<nowiki>#</nowiki>1 150 mm wafers | |||
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*As many small samples as can be fitted on a 150mm wafer | *As many small samples as can be fitted on a 150mm wafer | ||
*<nowiki>#</nowiki>1 50 mm wafer | *<nowiki>#</nowiki>1 50 mm wafer fittesd on a 150mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer fitted on a 150nm wafer | *<nowiki>#</nowiki>1 100 mm wafer fitted on a 150nm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers | *<nowiki>#</nowiki>1 150 mm wafers | ||
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*Aluminium | *Aluminium | ||
*Chromium (try to avoid it) | *Chromium (try to avoid it) | ||
*Quartz/fused silica | |||
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*[http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Please take a look in the cross contamination sheet in LabManager for details] | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Chromium | |||
*Quartz/fused silica | *Quartz/fused silica | ||
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Revision as of 11:38, 26 February 2021
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Comparing silicon oxide etch methods at DTU Nanolab
There are a broad varity of silicon oxide etch methods at DTU Nanolab. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.
- Wet Silicon Oxide Etch
- SiO2 etch using ASE
- SiO2 etch using III-V RIE
- SiO2 etch using AOE
- SiO2 etch using ICP metal
- IBE/IBSD Ionfab 300
- SiO2 etch using Plasma Asher (isotropic)
Compare the methods for Silicon Oxide etching
Wet Silicon Oxide etch (BHF/HF) | ASE | III-V RIE | AOE (Advanced Oxide Etch) | DRIE Pegasus 4 | ICP metal | IBE/IBSD Ionfab 300 | HF Vapour Phase Etch | |
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Generel description |
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Possible masking materials |
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Etch rate range |
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<500nm/min |
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Substrate size |
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Allowed materials |
In the dedicated bath:
In a plastic beaker:
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