Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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[[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]] - ''Settings and deposition rates'' | [[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]] - ''Settings and deposition rates'' | ||
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results'' | |||
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature'' | [[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature'' |
Revision as of 12:28, 29 May 2021
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Chromium deposition
Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. Further down you will find the results of some studies on chromium deposition.
E-beam evaporation (Temescal) | E-beam evaporation and sputter deposition (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Lesker sputterer) | Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ) | |
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General description | E-beam deposition of Chromium | E-beam and sputter deposition of Chromium | E-beam deposition of Chromium | Sputter deposition of Chromium | Sputter deposition of Chromium |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | RF Ar clean | |
Layer thickness | 10Å to 1µm* | 10Å to 1µm* | 10Å to 1000 Å | at least up to 200 nm | at least up to 200 nm |
Deposition rate | 0.5 Å/s to 10 Å/s | 10 Å/s to 15 Å/s (e-beam)
Sputtering: Depends on process parameters. See here and process log. |
10 Å/s | Depends on process parameters. At least up to 2 Å/s. See process log. | Depends on process parameters. |
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Allowed substrates |
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Allowed materials |
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Comment | Takes approx. 20 min to pump down | Takes approx. 1 hour to pump down | Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber |
* For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.
Studies of Cr deposition processes
Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Wordentec - Settings and deposition rates
Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results
Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature