Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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Below are some SEM images of the silicon nanostructures achieved by the CORE process: | Below are some SEM images of the silicon nanostructures achieved by the CORE process: | ||
<gallery caption="" widths="380px" heights="300px" perrow="3"> | |||
[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px]] | ||
[[|thumb|left]] '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | [[|thumb|left]] '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | ||
[[File:Fig 13b.png|800px]] | [[File:Fig 13b.png|800px]]|'''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''''' | ||
'''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''''' | |||
[[File:Fig 13c.png|800px]] | [[File:Fig 13c.png|800px]] | ||
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'''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''''' | '''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''''' | ||
</gallery> | |||