Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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m →‎Deposition of Titanium Oxide: we now have 3 sputter system options for titania
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!
!
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
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!Generel description
!Generel description
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*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
*TiO<sub>2</sub> created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*Reactive DC sputtering of Ti target in Ar/O2 plasma
*(Reactive) RF sputtering of TiO2 target
*Reactive pulsed DC sputtering of Ti target in Ar/O2 plasma
*Reactive HIPIMS (high-power impulse magnetron sputtering of Ti target in Ar/O2
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma
*RF sputtering of TiO2 target
*RF sputtering of TiO2 target
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*Can probably be varied (sputter target: Ti, O2 added during deposition)
*Can probably be varied (sputter target: Ti, O2 added during deposition)
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*unknown
*Can probably be varied
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*Can probably be varied
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*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
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*~10 nm - ~0.5 µm (>2h)
*~10 nm - ~0.5 µm (>2h)
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*~10 nm - ~0.5 µm
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*~10 nm - ~0.5 µm (>2h)
*~10 nm - ~0.5 µm (>2h)
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*3.0-3.5 nm/min (reactive sputtering)
*3.0-3.5 nm/min (reactive sputtering)
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*not yet known, probably faster than Sputter-System(Lesker)
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*3-5 nm/min (RF sputtering)
*3-5 nm/min (RF sputtering)
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Not Known
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*Not Known
*Not Known
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!Process Temperature
!Process Temperature
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*Expected to be below 100<sup>o</sup>C
*Expected to be below 100 °C
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*Done at RT. There is a possibility to run at higher temperatures
*RT to 600 °C
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*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub>
*RT to 400 °C
*300<sup>o</sup>C - 350<sup>o</sup>C: Anatase TiO<sub>2</sub>   
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*120 °C - 150 °C: Amorphous TiO<sub>2</sub>
*300 °C - 350 °C: Anatase TiO<sub>2</sub>   
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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*
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*
*
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*1 200mm wafer
*1 200mm wafer
*Smaller pieces can be mounted with capton tape
*Smaller pieces can be mounted with capton tape
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*many small samples
*Up to 10x 100 mm or 150 mm wafers
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*several small samples
*several small samples
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*Almost any materials
*Almost any materials
*Pb and poisonous materials only after special agreement
*Pb and poisonous materials only after special agreement
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*Almost any that do not outgas and are not very poisonous
*Dedicated carrier for III-V materials
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
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*Silicon
*Silicon

Revision as of 11:57, 23 April 2020

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Deposition of Titanium Oxide

Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). In sputter deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry.

Comparison of the methods for deposition of Titanium Oxide

Sputter technique using IBE/IBSD Ionfab300 Sputter-system Metal-Oxide(PC1) Sputter-System(Lesker) ALD Picosun 200
Generel description
  • TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
  • Reactive DC sputtering of Ti target in Ar/O2 plasma
  • (Reactive) RF sputtering of TiO2 target
  • Reactive pulsed DC sputtering of Ti target in Ar/O2 plasma
  • Reactive HIPIMS (high-power impulse magnetron sputtering of Ti target in Ar/O2
  • Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma
  • RF sputtering of TiO2 target
  • ALD (atomic layer deposition) of TiO2
Stoichiometry
  • Can probably be varied (sputter target: Ti, O2 added during deposition)
  • Can probably be varied
  • Can probably be varied
  • Temperature dependent - Anatase or amorphous TiO2
Film Thickness
  • ~10 nm - ~0.5 µm (>2h)
  • ~10 nm - ~0.5 µm
  • ~10 nm - ~0.5 µm (>2h)
  • 0 nm - 100 nm
Deposition rate
  • 3.0-3.5 nm/min (reactive sputtering)
  • not yet known, probably faster than Sputter-System(Lesker)
  • 3-5 nm/min (RF sputtering)
  • 0.3 - 0.5 nm/min
  • 0.06 nm/min - 0.40 nm/min (very recipe and temperature dependent)
Step coverage
  • Not Known
  • Not Known
  • Not Known
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature
  • Expected to be below 100 °C
  • RT to 600 °C
  • RT to 400 °C
  • 120 °C - 150 °C: Amorphous TiO2
  • 300 °C - 350 °C: Anatase TiO2
More info on TiO2

ALD1:

ALD2:

Substrate size
  • 1 50mm wafer
  • 1 100mm wafer
  • 1 150mm wafer
  • 1 200mm wafer
  • Smaller pieces can be mounted with capton tape
  • many small samples
  • Up to 10x 100 mm or 150 mm wafers
  • several small samples
  • several 50 mm wafers (Ø150mm carrier)
  • 1x 100 mm wafers
  • 1x 150 mm wafers

ALD1:

  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • 1 200 mm wafer
  • Several smaller samples

ALD2:

  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 200 mm wafer
  • Several smaller samples
Allowed materials
  • Almost any materials
  • not Pb and very poisonous materials
  • Almost any materials
  • Pb and poisonous materials only after special agreement
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals - Use a dedicated carrier wafer
  • III-V materials - Use dedicated carrier wafer
  • Polymers - Depending on the melting point/deposition temperature, use dedicated carrier wafer. Ask for permission