Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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 ==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS==
-[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]]
+[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom 2]]
-At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 10 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a excellent step coverage and extreamly good for trench filling and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One that opens slowly for depositing thick layers (>750nm) and one for deposition of thin layers that opens faster. To get information on how to operate the furnace please read the manual which is uploaded to LabManager. Remember to anneal the TEOS oxide to improve the electrical properties as well as chemical resistance.
+Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.
+TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 725 degrees Celsius. It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance.
+The LPCVD TEOS has a excellent step coverage and is very good for trench filling. The film thickness is very uniform over the wafer.
+To get information on how to operate the furnace please read the user manual which is uploaded to LabManager.
 ==Process Knowledge==