Specific Process Knowledge/Thin film deposition: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,409 edits
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,409 edits
→‎Choose material to deposit: small rearrangement
Line 16: Line 16:


|style="background: LightGray"|
|style="background: LightGray"|
[[/Deposition of Alumina|Aluminium Oxide (Al<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Barium titanate (BaTiO<sub>3</sub>)]]<br/>
[[/Lesker|Chromium Oxide (Cr<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Deposition of Hafnium Oxide|Hafnium Oxide (HfO<sub>2</sub>)]]<br/>
[[/Deposition of Silicon Oxide|Silicon Oxide (SiO<sub>2</sub>)]]<br/>
[[/Deposition of Silicon Oxide|Silicon Oxide (SiO<sub>2</sub>)]]<br/>
[[/Deposition of Titanium Oxide|Titanium Oxide (TiO<sub>2</sub>)]]<br/>
[[/Deposition of Titanium Oxide|Titanium Oxide (TiO<sub>2</sub>)]]<br/>
[[/Deposition of Alumina|Aluminium Oxide (Al<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Lesker|Tantalum Oxide (Ta<sub>2</sub>O<sub>5</sub>)]]<br/>
[[/Lesker|Tantalum Oxide (Ta<sub>2</sub>O<sub>5</sub>)]]<br/>
[[/Lesker|Chromium Oxide (Cr<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Deposition of Hafnium Oxide|Hafnium Oxide (HfO<sub>2</sub>)]]<br/>


|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
Line 57: Line 58:
|style="background: LightGray"|
|style="background: LightGray"|
[[/Lesker|AlCu]]<br/>
[[/Lesker|AlCu]]<br/>
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|BaTiO<sub>3</sub>]] (Barium titanate)<br/>
[[/Lesker|CoFe]]<br/>
[[/Lesker|CoFe]]<br/>
[[/Lesker|CuTi]]<br/>
[[/Lesker|CuTi]]<br/>
Line 67: Line 67:
[[/Deposition of NiV|NiV]] alloy <br/>
[[/Deposition of NiV|NiV]] alloy <br/>
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
And an electroceramic:
[[/Lesker|YSZ]] (Yttrium stabilized zirconia)<br/>
[[/Lesker|YSZ]] (Yttrium stabilized zirconia)<br/>


Revision as of 11:14, 22 April 2020

3rd Level - Material/Method

Feedback to this page: click here


Choose material to deposit

Dielectrica Semicondutors Metals Nitrides Alloys Transparent conductive oxides Polymers

Aluminium Oxide (Al2O3)
Barium titanate (BaTiO3)
Chromium Oxide (Cr2O3)
Hafnium Oxide (HfO2)
Silicon Oxide (SiO2)
Titanium Oxide (TiO2)
Tantalum Oxide (Ta2O5)

Silicon
Germanium
Zinc Oxide (ZnO)

Aluminium
Chromium
Cobalt
Copper
Gold
Iron
Magnesium
Molybdenum
Nickel
Niobium
Palladium
Platinum
Ruthenium
Silver
Tantalum
Tin
Titanium
Tungsten
Zinc

Silicon Nitride - and oxynitride
Titanium Nitride - conductive ceramics
Aluminum Nitride (AlxNy)

AlCu
CoFe
CuTi
FeMn
MnIr
NbTi
NiCo
NiFe
NiV alloy
TiW alloy (10%/90% by weight)

And an electroceramic:

YSZ (Yttrium stabilized zirconia)

ITO (Tin doped Indium Oxide)
AZO (Aluminum doped Zinc Oxide)

SU-8
Antistiction coating
Topas
PMMA

Choose deposition equipment

PVD LPCVD PECVD ALD Coaters Others



  • ALD1 - Atomic Layer Deposition (thermal)
  • ALD2 (PEALD) - Atomic Layer Deposition (thermal and plasma enhanced)

See the Lithography/Coaters page for coating polymers

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition&oldid=36149"