Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | | About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | ||
| Depends on process parameters, roughly 0.2-2 Å/s. | | Depends on process parameters, roughly 0.2-2 Å/s. See Process Log. | ||
|Depends on process parameters | |Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | ||
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