Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
| Line 443: | Line 443: | ||
!colspan="1" border="none" style="background:silver; color:black;" align="center"|Recipe name | !colspan="1" border="none" style="background:silver; color:black;" align="center"|Recipe name | ||
|style="background:silver; color:black"| | |style="background:silver; color:black"|<b>Target material</b> | ||
|style="background:silver; color:black"| | |style="background:silver; color:black"|<b>Pressure (mTorr)</b> | ||
|style="background:silver; color:black"| | |style="background:silver; color:black"|<b>Power (W)</b> | ||
|style="background:silver; color:black"| | |style="background:silver; color:black"|<b>Deposition rate (nm/min)</b> | ||
|style="background:silver; color:black"| | |style="background:silver; color:black"|<b>Uniformity (%)<br> on 6 inch wafer</b> | ||
|style="background:silver; color:black"| | |style="background:silver; color:black"|<b>Comments</b> | ||
| Line 454: | Line 454: | ||
!style="background:silver; color:black;" align="center" |MD PC1 Src1 RF Upstream | !style="background:silver; color:black;" align="center" |MD PC1 Src1 RF Upstream | ||
|style="background:LightGrey; color:black" align="center"| | |style="background:LightGrey; color:black" align="center"|<b>SiO<sub>2</sub></b> | ||
|style="background:WhiteSmoke; color:black" align="center"|3 | |style="background:WhiteSmoke; color:black" align="center"|3 | ||
| Line 469: | Line 469: | ||
!style="background:silver; color:black;" align="center" |MD PC1 Src2 RF Upstream | !style="background:silver; color:black;" align="center" |MD PC1 Src2 RF Upstream | ||
|style="background:LightGrey; color:black" align="center"| | |style="background:LightGrey; color:black" align="center"|<b>SiO<sub>2</sub></b> | ||
|style="background:WhiteSmoke; color:black" align="center"|3 | |style="background:WhiteSmoke; color:black" align="center"|3 | ||